switches - chip 4 4 - 44 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com gaas pin mmic spdt switch 55 - 86 ghz v02.0309 general description features functional diagram low insertion loss: 2 db high isolation: 30 db dc blocked rf i/os integrated dc bias circuitry die size: 2.01 x 0.975 x 0.1 mm electrical speci cations*, t a = +25 c, with -5/+5v control, 50 ohm system typical applications this hmc-sdd112 is ideal for: ? fcc e-band communication systems ? short-haul / high capacity radios ? automotive radar ? test & measurement equipment ? satcom ? sensors the hmc-sdd112 is a monolithic, gaas pin diode based single pole double throw (spdt) mmic switch which exhibits low insertion loss and high isolation. this all-shunt mmic spdt features on-chip dc blocks and dc bias voltage decoupling circuitry. all bond pads and the die backside are ti/au metallized and the pin diode devices are fully passivated for reliable operation. the hmc-sdd112 gaas pin spdt is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for mcm and hybrid microcircuit applications. all data shown herein is measured with the chip in a 50 ohm en- vironment and contacted with rf probes. parameter min. typ. max. units frequency range 55 - 86 ghz insertion loss 23db isolation 25 30 db return loss on state 12 db current (+5 v) on state 22 ma current (-5 v) off state -63 na * unless otherwise indicated, all measurements are from probed die hmc-sdd112
switches - chip 4 4 - 45 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com on insertion loss vs. freq. ctla= -5v, ctlb= 5v for rfout1 to be on hmc-sdd112 v02.0309 gaas pin mmic spdt switch 55 - 86 ghz off isolation vs. freq. ctla= +5v, ctlb= -5v for rfout1 to be off on input return loss vs. freq. ctla= -5v, ctlb= 5v for rfout1 to be on on output return loss vs. freq. ctla= -5v, ctlb= 5v for rfout1 to be on note 1: measured performance characteristics (typical performance at 25c) test data is taken with probes on rfin and rfout1 with rfout2 left open. -5 -4 -3 -2 -1 0 55 60 65 70 75 80 85 90 insertion loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 55 60 65 70 75 80 85 90 return loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 55 60 65 70 75 80 85 90 return loss (db) frequency (ghz) -45 -40 -35 -30 -25 -20 -15 -10 -5 0 55 60 65 70 75 80 85 90 isolation (db) frequency (ghz)
switches - chip 4 4 - 46 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc-sdd112 v02.0309 gaas pin mmic spdt switch 55 - 86 ghz outline drawing absolute maximum ratings bias voltage range -5.5 to 5.5 vdc storage temperature -65 to +150 c operating temperature -55 to +85 c bias current (on state) 30 ma electrostatic sensitive device observe handling precautions control voltages state bias condition low -5 v @ 63 na typical high +5 v @ 22 ma typical truth table control input signal path state ctla ctlb rfin to rfout1 rfin to rfout2 low (-5v) high (+5v) high (+5v) low (-5v) on off off on notes: 1. all dimensions are in inches [mm]. 2. typical bond pad is .004 square. 3. backside metallization: gold. 4. backside metal is ground. 5. bond pad metallization: gold. 6. connection not required for unlabeled bond pads. 7. overall die size .002 die packaging information [1] standard alternate gp-5 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
switches - chip 4 4 - 47 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad number function pin description interface schematic 1rfout1 this pin is dc blocked and matched to 50 ohms. 2,3 ctla, ctlb see truth table and control voltage table 4rfout2 this pin is dc blocked and matched to 50 ohms. 5rfin this pin is dc blocked and matched to 50 ohms. die bottom gnd die bottom must be connected to rf/dc ground. pad descriptions hmc-sdd112 v02.0309 gaas pin mmic spdt switch 55 - 86 ghz
switches - chip 4 4 - 48 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc-sdd112 v02.0309 gaas pin mmic spdt switch 55 - 86 ghz assembly diagram note 1: bypass caps should be 100 pf (approximately) ceramic (single-layer) placed no farther than 30 mils from the switch. note 2: best performance obtained from use of <6 mil (long) by 1.5 by 0.5 mil ribbons on input and output.
switches - chip 4 4 - 49 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protec- tive containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom- mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc-sdd112 v02.0309 gaas pin mmic spdt switch 55 - 86 ghz
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